november 1999 - ed: 4c specific to "freewheel mode" operations: freewheel or booster diode. ultra-fast recovery. very low overall power losses in both the diode and the companion transistor. high frequency operations. insulated package : isotop electrical insulation : 2500v rms capacitance < 45 pf features and benefits isotop tm the turboswitch is a very high performance series of ultra-fast high voltage power diodes from 600v to 1200v. turboswitch family, drastically cuts losses in both the diode and the associated switching igbt or mosfet in all "freewheel mode" operations and is particularly suitable and efficient in motor control freewheel applications and in booster diode applications in power factor control circuitries. packaged either in isotop or sod93 these 600v devices are particularly intended for use on 240v domestic mains. description i f(av) 60a / 2 x 60a v rrm 600v t rr (typ) 45ns v f (max) 1.5v main product characteristics symbol parameter value unit v rrm repetitive peak reverse voltage 600 v v rsm non repetitive peak reverse voltage 600 v i f(rms) rms forward current sod93 80 a isotop 150 a i frm repetitive peak forward current tp=5 m s f=5khz square 450 a i fsm surge non repetitive forward current tp=10 ms sinusoidal 500 a t j maximum operating junction temperature 150 c t stg storage temperature range -65 to 150 c tm : turboswitch is a trademark of stmicroelectronics absolute ratings (limiting values, per diode) stta6006p stta12006tv1/2 ? turboswitch ? ultra-fast high voltage diode k2 a2 a1 k1 stta12006tv1 k2 a2 a1 k1 stta12006tv2 k a k sod93 stta6006p 1/8
symbol parameter test conditions min typ max unit v f * forward voltage drop i f =60a tj = 25c tj = 125c 1.25 1.75 1.5 v v i r ** reverse leakage current v r =0.8 x v rrm tj = 25c tj = 125c 5 200 12 m a ma v to threshold voltage ip < 3.i av tj = 125c 1.14 v rd dynamic resistance 6 m w test pulses : * tp = 380 m s, d < 2% ** tp = 5 ms, d < 2% static electrical characteristics symbol parameter test conditions value unit r th(j-c) junction to case thermal resistance per diode 0.85 c/w total 0.47 coupling 0.1 p 1 conduction power dissipation i f(av) = 60a d =0.5 sod93 tc= 64c 108 w isotop tc= 58c p max total power dissipation pmax = p1 + p3 (p3 = 10% p1) sod93 tc= 54c 120 w isotop tc= 48c thermal and power data (per diode) symbol parameter test conditions min typ max unit t rr reverse recovery time tj = 25c i f = 0.5 a i r = 1a irr = 0.25a i f = 1 a di f /dt =-50a/ m s v r =30v 45 80 ns i rm maximum reverse recovery current tj = 125c vr = 400v i f =60a di f /dt = -480 a/ m s di f /dt = -500 a/ m s24 38 a s factor softness factor tj = 125c v r = 400v i f =60a di f /dt = -500 a/ m s0.37 / dynamic electrical characteristics turn-off switching symbol parameter test conditions min typ max unit t fr forward recovery time tj = 25c i f =60 a, di f /dt = 480 a/ m s measured at, 1.1 v f max 700 ns v fp peak forward voltage tj = 25c i f =60a, di f /dt = 480 a/ m s14 v turn-on switching to evaluate the maximum conduction losses use the following equation : p = v to x i f(av) + rd x i f 2 (rms) stta12006tv1/2 / stta6006p 2/8
p1(w) 0 5 10 15 20 25 30 35 40 45 50 55 60 0 20 40 60 80 100 120 =0.2 =0.5 =1 if(av)(a) t =tp/t tp =0.1 fig. 1: conduction losses versus average current. vfm(v) 1 10 100 1000 0.00 0.50 1.00 1.50 2.00 2.50 3.00 3.50 maximum values ifm(a) tj=125 c o fig. 2: forward voltage drop versus forward current. fig. 3: relative variation of thermal transient impedance junction to case versus pulse duration. irm(a) 0 100 200 300 400 500 600 700 800 900 1000 0 5 10 15 20 25 30 35 40 45 50 55 vr=400v 90% confidence tj=125 c o dif/dt(a/ s) if=30a if=120a if=60a fig. 4: peak reverse recovery current versus di f /dt. 0 100 200 300 400 500 600 700 800 900 1000 50 75 100 125 150 175 200 225 250 275 300 325 350 trr(ns) vr=400v 90% confidence tj=125 c o dif/dt(a/ s) if=30a if=120a if=60a fig. 5: reverse recovery time versus di f /dt. sfactor 0 100 200 300 400 500 600 700 800 900 1000 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60 0.65 0.70 0.75 0.80 dif/dt(a/ s) vr=400v if<2xif(av) typical values tj=125 c o fig. 6: softness factor (tb/ta) versus di f /dt. stta12006tv1/2 / stta6006p 3/8
0 25 50 75 100 125 150 0.5 0.8 1.0 1.3 1.5 1.8 2.0 2.3 2.5 2.8 3.0 3.3 3.5 3.8 4.0 irm s factor tj(oc) fig. 7: relative variation of dynamic parameters versus junction temperature (reference tj=125c). vfp(v) 0 200 400 600 800 1000 1200 0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0 90% confidence tj=125 c o dif/dt(a/ s) if=if(av) fig. 8: transient peak forward voltage versus di f /dt. tfr(ns) 0 200 400 600 800 1000 1200 0 100 200 300 400 500 600 700 800 900 1000 90% confidence tj=125 c o dif/dt(a/ s) if=if(av) vfr=1.1*vf max. fig. 9: forward recovery time versus di f /dt. stta12006tv1/2 / stta6006p 4/8
fig. a : "freewheel" mode. total losses due to the diode p = p1+ p2+ p3+ p4+ p5 watts switching losses in the diode switching losses in the tansistor due to the diode conduction losses in the diode reverse losses in the diode the turboswitch is especially designed to provide the lowest overall power losses in any "freewheel mode" application (fig.a) considering both the diode and the companion transistor, thus optimizing the overall performance in the end application. the way of calculating the power losses is given below: application data diode: turboswitch il load transistor switching t t f=1/t =t/t v r stta12006tv1/2 / stta6006p 5/8
turn-on losses : (in the transistor, due to the diode) p5 = v r i rm 2 ( 3 + 2 s ) f 6 x di f dt + v r i rm i l ( s + 2 ) f 2 x di f dt turn-off losses (in the diode) : p3 = v r i rm 2 s f 6 x di f dt p3 and p5 are suitable for power mosfet and igbt i i f rd i r v r v to v f v fig. b: static characteristics v i il t transistor di /dt f di /dt r tb ta i rm vr diode i v t trr = ta + tb s = tb / ta fig. c: turn-off characteristics i f v f v fp 1.1v f v f f di /dt 0 0t t i fmax tfr fig. d: turn-on characteristics conduction losses : p1 = v t0 . i f(av) + r d . i f 2 (rms) reverse losses : p2 = v r . i r . (1 - d ) turn-on losses : p4 = 0.4 (v fp - v f ) . i fmax . t fr . f application data (contd) stta12006tv1/2 / stta6006p 6/8
package mechanical data sod93 cooling method : by conduction (c) recommended torque value : 0.8 m.n maximum torque value : 1m.n ref. dimensions millimeters inches min. typ. max. min. typ. max. a 4.70 4.90 0.185 0.193 c 1.17 1.37 0.046 0.054 d 2.50 0.098 d1 1.27 0.050 e 0.50 0.78 0.020 0.031 f 1.10 1.30 0.043 0.051 f3 1.75 0.069 g 10.80 11.10 0.425 0.437 h 14.70 15.20 0.578 0.598 l 12.20 0.480 l2 16.20 0.638 l3 18.0 0.709 l5 3.95 4.15 0.156 0.163 l6 31.00 1.220 o 4.00 4.10 0.157 0.161 stta12006tv1/2 / stta6006p 7/8
package mechanical data isotop ref. dimensions millimeters inches min. max. min. max. a 11.80 12.20 0.465 0.480 a1 8.90 9.10 0.350 0.358 b 7.8 8.20 0.307 0.323 c 0.75 0.85 0.030 0.033 c2 1.95 2.05 0.077 0.081 d 37.80 38.20 1.488 1.504 d1 31.50 31.70 1.240 1.248 e 25.15 25.50 0.990 1.004 e1 23.85 24.15 0.939 0.951 e2 24.80 typ. 0.976 typ. g 14.90 15.10 0.587 0.594 g1 12.60 12.80 0.496 0.504 g2 3.50 4.30 0.138 0.169 f 4.10 4.30 0.161 0.169 f1 4.60 5.00 0.181 0.197 p 4.00 4.30 0.157 0.69 p1 4.00 4.40 0.157 0.173 s 30.10 30.30 1.185 1.193 cooling method : by conduction (c) ordering type marking package weight base qty delivery mode stta6006p stta6006p sod93 3.79g 30 tube stta12006tv1 stta12006tv1 isotop 27g without screws 10 tube stta12006tv2 stta12006tv2 isotop 10 tube epoxy meets ul94,v0 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the conse quences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without expres s written ap- proval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 1999 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com stta12006tv1/2 / stta6006p 8/8
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